Patent number: 05080870
Issue Date: 01-14-1992
Application date and (Application number): 08-28-1989
(400241)
Related patent information: CONTINUATION-IN-PART OF SERIAL NO. 241,578 FILED 1988-09-08
Primary examiner: WARDEN; ROBERT J.
Unified Assignee: UNIV TEXAS, BD. OF REGENTS
Assignee: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
Assignee location: AUSTIN, TX, UNITED STATES
Inventor 1: STREETMAN, BEN G.
AUSTIN, TX, UNITED STATES
Inventor 2: MATTORD, TERRY J.
RED ROCK, TX, UNITED STATES
Inventor 3: NEIKIRK, DEAN P.
AUSTIN, TX, UNITED STATES
Title: SUBLIMATING AND CRACKING APPARATUS
Abstract: A FURNACE HAVING A SUBLIMATING SECTION, A CRACKING SECTION ORIENTED OFF AXIS TO THE SUBLIMATING SECTION, AND A VALVE FOR CONTROLLING FLUX BETWEEN THE SECTIONS. THE VALVE INCLUDES AN ANNULAR PLUG HAVING AT LEAST ONE LONGITUDINAL SLOT. THE PLUG IS RETRACTABLE FROM A FULLY CLOSED POSITION WHERE THE SLOT IS COMPLETELY COVERED, TO A FULLY OPEN POSITION WHERE THE SLOT IS COMPLETELY EXPOSED. THE SLOT BECOMES INCREASINGLY EXPOSED AS THE PLUG IS MOVED FROM THE FULLY CLOSED POSITION TO THE FULLY OPENED POSITION, THEREBY INCREASING FLUX FROM THE SUBLIMATING SECTION TO THE CRACKING SECTION.
Exemplary claims: Claim 1. A HIGH VACUUM FURNACE CAPABLE OF USE IN GENERATING A COLLIMATED BEAM FOR USE IN MOLECULAR BEAM EPITAXY COMPRISING A SUBLIMATING SECTION CONNECTED WITH A CRACKING SECTION AND MEANS FOR VACUUM PUMPING SAID SECTIONS SUBSTANTIALLY TO A VACUUM ENVIRONMENT, AND FURTHER COMPRISING A VALVE BETWEEN SAID SECTIONS FOR CONTROLLING MOLECULAR FLUX, THE VALVE COMPRISING AN ANNULAR PLUG CONNECTED AT ONE END TO A PUSH ROD FOR MOVING THE PLUG BETWEEN A FULLY OPEN POSITION AND A FULLY CLOSED POSITION, THE PLUG INCLUDING AT LEAST ONE LONGITUDINAL SLOT FOR DECREASING MOLECULAR FLOW FROM THE SUBLIMATING SECTION TO THE CRACKING SECTION AS THE PLUG IS MOVED FROM THE FULLY OPEN POSITION TO THE FULLY CLOSED POSITION.
US classification: 118-715-000, 118-724-000, 118-726-000, 148-DIG-006, 148-DIG-169, 156-103-000, 422-164-000, 422-167-000, 422-199-000, 437-105-000, 437-106-000, 437-107-000, 437-930-000,
International classification: B01J 19-00
References to US patents: 02069309, 02440135, 02793609, 03153137, 03434894, 03547074, 03662154, 03916034, 03974002, 04137865, 04179312, 04181544, 04239955, 04286545, 04385946, 04392453, 04426569, 04518846, 04543467, 04553022, 04607152, 04646680, 04648347, 04699083, 04748315, 04777022,
Reference to Other publications:

EPI SYSTEM BROCHURE FOR MODEL 175 CRACKING EFFUSION CELL.

GARCIA ET AL., "DIMER ARSENIC SOURCE USING A HIGH EFFICIENCY CATALYTIC CRACKING OVEN FOR MOLECULAR BEAM EPITAXY", APPLY. PHYS. LETT., VOL. 51, NO. 8, PP. 593-595, DATED 8/24/87.

CALAWA, "ON THE USE OF AsH3 IN THE MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs", APPL. PHYS. LETT, VOL. 38, NO. 9, PP. 701-703, DATED 5/1/81.

EPI SYSTEMS' "DUAL FILAMENT EFFUSION CELLS".

EPI PRODUCT GUIDE.

MILLER ET AL., "J. VAC. SCI. TECHNOL.", B8(2), MAR., APR. 1990.

U.S. Citations: Check for other U.S. patents which cite this patent.