Reference page for bolometers, mainly for room temperature
bolometer IR focal plane arrays.
Our new work on "color vision" in the infrared
design of multi-band, multi-color infrared antennas
slides used at our talk, S.-W. Han and
D. P. Neikirk, "Design of infrared wavelength-selective microbolometers using
planar multimode detectors," presented at Proceedings of the SPIE Vol. 5836
Smart Sensors, Actuators, and MEMS II, Microtechnologies for the New
Millennium 2005, Seville, Spain, May 9-11, 2005, pp. 549-557.
pdf of the paper
some references on microbolometers
by our group .
return to the Microelectromagnetic
Device Group .
main references list .
- SBRC 320 X 240
room temperature infrared FPA .
- NASAJPL CENTER FOR
SPACE MICROELECTRONICS TECHNOLOGY High-Temperature Superconducting Transition
Edge Microbolometers for Long Wavelength Infrared Detection .
- Fabrication of semiconducting YBaCuO surface-micromachined bolometer
arrays. Christine M. Travers ,Agha Jahanzeb, Donald P. Butler, and Zeynep
Çelik-Butler.To appear in Journal of Microelectromechanical Systems,
Vol. 6(3), (1997). abstract
millimeter wave imaging growing fast by Yvonne Carts-Powell, SPIE Reports,
- Honeywell Infrared
Projector Technology .
Proceedings Vol. 2746 Infrared Detectors and Focal Plane Arrays IV
TV Image Format 320 x 240 Uncooled Focal-Plane Array .
- 1994 (?) SBIR: Fermionics Corp., 4555 Runway St., Simi Valley, CA 93063
. Phase: 1; Topic: ROOM TEMPERATURE INFRARED FOCAL PLANE ARRAY IMAGING
Infrared detector with Fabry-Perot interferometer: Inventor: Koskinen;
Yrjo , Helsinki, Finland; Applicant(s): Vaisala Oy, Helsinki, Finland;
Issued/Filed Dates: Dec. 31, 1996 / July 7, 1995
- Abstract: The invention relates to a silicon micromechanically fabricated
infrared detector having an infrared radiation absorbing layer (7, 44)
deposited on an insulating substrate and a detector (11, 24, 25) for detecting
the amount of radiation absorbed in the metallic absorbing layer. According
to the invention, on the path of the radiation, prior to the absorbing
layer (7, 44) is located an electrically controllable Fabry-Perot interferometer
(1, 2, 5) manufactured by silicon micromechanical techniques and having
the absorbing layer (7, 44) integrally coupled with one of the mirrors
(1, 2) thereof).