For further information contact Professor Dean Neikirk at neikirk@mial.utexas.edu

"Influence
of Space Charge and Quantum Well Negative Resistances on Resonant Tunneling
Diodes," V.P. Kesan, D. R. Miller, V. K. Reddy, K. K. Gullapalli,
and D.P. Neikirk.

"Experimental Operation of the Quantum Well Injection Transit Time (QWITT) Diode," V. P. Kesan, A. Mortazawi, D. R. Miller, V. K. Reddy, A. Tsao, and D.P. Neikirk.

"AlAs/In_{0.53}Ga_{0.47}As
Depletion Edge Modulated QWITT (DEMQWITT) Diode," Vijay Reddy,
Shiva Javalagi, and Dean P. Neikirk

V. P. Kesan, D. P. Neikirk, B. G. Streetman, and P. A. Blakey, "A
New Transit Time Device Using Quantum Well Injection," *IEEE Electron
Device Lett.*, vol. EDL-8, pp. 129-131, 1987.

V. P. Kesan, A. Mortazawi, D. P. Neikirk, and T. Itoh, "Monolithic
Millimeter-Wave Oscillator using a Transmission Line Periodically Loaded
by QWITT Diodes," *Electron. Lett.*, pp. 666-667, 1988.

V. P. Kesan, A. Mortazawi, D. R. Miller, T. Itoh, B. G. Streetman, and D.
P. Neikirk, "Microwave Frequency Operation of the Quantum Well Injection
Transit Time (QWITT) Diode," *Electron. Lett.*, pp. 1473-1474,
1988.

V. P. Kesan, D. P. Neikirk, T. D. Linton, P. A. Blakey, and B. G. Streetman,
"Influence of Transit Time Effects on the Optimum Design and Maximum
Oscillation Frequency of Quantum Well Oscillators," *IEEE Trans.
Electron Devices*, vol. ED-35, pp. 405-413, 1988.

V. P. Kesan, A. Mortazawi, D. R. Miller, V. K. Reddy, D. P. Neikirk, and
T. Itoh, "Microwave and Millimeter-Wave QWITT Diode Oscillators,"
*IEEE Trans. Microwave Theory Tech.*, vol. 37, pp. 1933-1941, 1989.

V. Kesan, "Quantum
Well Devices for Microwave and Millimeter Wave Oscillator Applications,"
1989, PhD, The University of Texas at Austin.

C. S. Kyono, V. P. Kesan, D. P. Neikirk, C. M. Maziar, and B. G. Streetman,
"Dependence of apparent barrier height on barrier thickness for perpendicular
transport in AlAs/GaAs single barrier structures grown by MBE," *Appl.
Phys. Lett.*, vol. 54, pp. 549-551, 1989.

V. K. Reddy, A. J. Tsao, and D. P. Neikirk, "High Peak-to-Valley Current
Ratio AlGaAs/AlAs/GaAs Double Barrier Resonant Tunneling Diodes," *Electron.
Lett.*, vol. 26, pp. 1742-1744, 1990.

A. J. Tsao, V. K. Reddy, and D. P. Neikirk, "Epitaxial
Liftoff of AlAs/GaAs Double Barrier Resonant Tunneling Diodes,"
*Electron. Lett.*, vol. 27, pp. 484-486, 1991.

A. J. Tsao, V. K. Reddy, D. R. Miller, K. K. Gullapalli, and D. P. Neikirk,
"The effect of barrier thickness asymmetries on the electrical characteristics
of AlAs/GaAs double barrier resonant tunneling diodes," *J. Vac.
Sci. Technol. B*, vol. 10, pp. 1042-1044, 1992.

S. Javalagi, V. Reddy, K. Gullapalli, and D. Neikirk, "High
Efficiency Microwave Diode Oscillators," *Electron. Lett.*,
vol. 28, pp. 1699-1701, 1992.

V. K. Reddy and D. P. Neikirk, "Influence of Growth Interruption on
I - V Characteristics of AlAs/GaAs Double Barrier Resonant Tunneling Diodes,"
*J. Vac. Sci. Technol. B*, vol. 10, pp. 1045-1047, 1992.

V. K. Reddy and D. P. Neikirk, "High breakdown voltage AlAs/InGaAs
quantum barrier varactor diodes," *Electron. Lett.*, vol. 29,
pp. 464-466, 1993.

A. Tsao, "Molecular Beam Epitaxial
Growth and Fabrication of Microwave and Photonic Devices for Hybrid Integration
on Alternative Substrates," 1993, PhD, The University of Texas
at Austin.

V. Reddy, "Characterization
of High Frequency Oscillators and Varactor Diodes Grown by Molecular Beam
Epitaxy," 1994, PhD, The University of Texas at Austin.

A short paper introducing memory
switching and non-volatile storage in quantum well diodes.

A short paper on time
dependent simulation of transitions in a memory switching quantum well diode.

A. C. Campbell, V. P. Kesan, G. E. Crook, C. M. Maziar, D. P. Neikirk, and
B. G. Streetman, "Impedance Switching Effects in GaAs/AlAs Barrier
Structures," *Electron. Lett.*, vol. 23, pp. 926-927, 1987.

A. C. Campbell, V. P. Kesan, G. E. Crook, C. M. Maziar, D. P. Neikirk, and
B. G. Streetman, "Capacitive Hysteresis Effects in 5.0nm Single and
Double Barrier AlAs Tunneling Structures Grown by MBE," *J. Vac.
Sci. Technol. B*, vol. 6, pp. 651-656, 1988.

D. R. Miller and D. P. Neikirk, "Simulation of Intervalley Mixing in
Double Barrier Diodes Using the Lattice Wigner Function," *Appl.
Phys. Lett.*, vol. 58, pp. 2803-2805, 1991.

K. K. Gullapalli, D. R. Miller, and D. P. Neikirk, "Hybrid Boltzmann
Transport - Schrödinger Equation Model for Quantum Well Injection Transit
(QWITT) Diodes," *IEEE International Electron Devices Meeting*,
Washington, DC, Dec. 8-11, 1991, pp. 18.5.1-18.5.4.

D. R. Miller and D. P. Neikirk, "Lattice Wigner Simulations of Quantum
Devices," *IEEE International Electron Devices Meeting*, San Francisco,
CA, Dec. 13-16, 1992, pp. 561-564.

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk, "Observation of zero-bias
multi-state behavior in selectively doped two-terminal quantum tunneling
devices," *IEEE International Electron Devices Meeting*, San Francisco,
CA, Dec. 13-16, 1992, pp. 479-482.

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk, "Multiple self-consistent
solutions at zero bias and multiple conduction curves in quantum tunneling
diodes containing N^{-} - N^{+} - N^{-} spacer layers,"
*Appl. Phys. Lett.*, vol. 62, pp. 2971-2973, 1993.

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk, "Experimental observation
of multiple current - voltage curves and zero-bias memory in quantum well
diodes with N^{-} - N^{+} - N^{-} spacer layers,"
*Appl. Phys. Lett.*, vol. 62, pp. 2856-2858, 1993.

K. K. Gullapalli, D. R. Miller, and D. P. Neikirk, "Wigner-Poisson
simulation of memory switching heterostructure tunneling diodes," *IEEE
International Electron Devices Meeting*, Washington, DC, Dec. 5-8, 1993,
pp. 109-112.

K. K. Gullapalli, D. R. Miller, and D. P. Neikirk, "Simulation of quantum
transport in memory-switching double-barrier quantum-well diodes,"
*Phys. Rev. B*, vol. 49, pp. 2622-2628, 1994.

K. K. Gullapalli and D. P. Neikirk, "Incorporating spatially varying
effective-mass in the Wigner-Poisson model for AlAs/GaAs resonant-tunneling
diodes," *Proceedings of the Third Annual International Workshop
on Computational Electronics*, Portland, OR, May 18-20, 1994, pp. 171-174.

K. K. Gullapalli, "Heterostructure
Device Simulation using the Wigner Function," 1994, PhD, The University
of Texas at Austin.

Olin Hartin, dissertation title: "Quantum Transport Simulations of Novel Compound Semiconductor Devices," May, 1998.

Olin Hartin's recent work on memorty switching.

Please also see information on our research summary page.