Welcome to the MicroElectromagnetics Device Group
Pardon the chips and cracks, we are under "restoration"
On-going research and teaching performed under the supervision of Dr. Dean P. Neikirk, Dept. of Electrical and Computer Engineering
last update: 11/11/13
The Microelectromagnetic Devices Group studies the electromagnetic behavior of structures fabricated using integrated circuit processing techniques. For instance, understanding high-speed digital signal propagation between integrated circuits, IC packages, and high-performance printed wiring boards requires a background in solid-state devices, IC fabrication, and electromagnetics. Similarly, constructing new devices and circuits that operate at extremely high frequencies requires the same background. A major Microelectromagnetic Devices Group objective joins these diverse areas to explore high-speed and high-frequency circuit and device behavior, through both models and experiment.
An exciting new area of research involves the development of new sensors
using microfabrication techniques. In some cases these sensors are analogs
of natural senses; for instance, we are working on an "electronic tongue"
for use in new
chemical and biological agent sensors. Another area of research
is the study of how biological
entities detect infrared radiation, and the application of this knowledge
to engineered IR detectors (such as microbolometers). We are also investigating
the use of simple, low cost wireless sensors for "structural
health monitoring" to identifying material degradation in large civil
structures (bridges and buildings) before actual failure of the structure. This work is all generally
related to the fabrication and design of new
micro-sensors and actuators using IC processing and silicon micromachining
(mems). These sensors include optically
interrogated pressure sensors using micromachined Fabry-Perot cavities,
inductive proximity sensors. We have also investigated the application
of MEMS technology in such novel environments as mechanical
bearings and fluid seals.
Another major emphasis of our group has been the development of models of lossy transmission lines and interconnects. We are particularly interested in the impact of finite metal conductivity on interconnect characteristics, as well as the effect of substrate conductivity (e.g., semiconductor substrates) on signal propagation. Our models focus on the prediction of inductive and resistive effects, from dc resistance and internal inductance to skin-depth and proximity effect-dominated behavior, in both the frequency and time domains. We have done a variety of studies on planar inductors, including the effect of semiconductor substrate resistivity on inductor behavior.
Our group has done extensive work on monolithic microwave, millimeterwave, and far infrared devices, in particular on planar antennas, FIR detectors, microbolometers, high frequency resonant tunneling diodes, and coplanar waveguide phase shifters and delay lines.
Dr. Neikirk's group has also investigated devices based on quantum
interference effects. His group developed several quantum transport
models which were used to design heterostructure devices and, using the molecular
beam epitaxial crystal growth technique, these devices were fabricated. These devices
contained layers that are only a few atomic planes thick, causing very strong quantum interference. Originally these devices were
investigated for use as high
frequency oscillators, and were later studied for possible use as memory
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This page was last updated on November 11, 2013 .